Authors: Z G Yu G F Yang P Chen R H Liu H Zhao B Liu X M Hua Z L Xie X Q Xiu P Han H Lu X Y Song R Zhang Y D Zheng
Publish Date: 2012/11/14
Volume: 110, Issue: 1, Pages: 35-39
Abstract
Anodic aluminum oxide AAO films with different porosities were fabricated on the surfaces of InGaN/GaN multiple quantum wells MQWs We measured the photoluminescence spectra of these samples and then calculated the light extraction enhancement factors E It was found that the light extraction of the MQWs with the AAO films has been greatly enhanced compared to the area without AAO coverage The maximum value of E reaches 35 at a certain wavelength and 229 in the integral intensity The increase of E with the decrease of the porosities demonstrates that the nanohole structure in the AAO films plays an important role in enhancing the light extraction efficiencyThis work is supported by Special Funds for the Major State Basic Research Project 2011CB301900 the National Natural Science Foundation of China 61176063 60990311 60820106003 60906025 and 60936004 the Natural Science Foundation of Jiangsu province BK2008019 BK2010385 BK2009255 BK2010178 and BK2011436 and the Research Funds from NJU—Yangzhou Institute of Optoelectronics
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