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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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DOI

10.1016/0006-3002(58)90445-1

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1432-0630

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Temperaturedependent electrical properties for gr

Authors: YowJon Lin JianJhou Zeng HsingCheng Chang
Publish Date: 2014/08/28
Volume: 118, Issue: 1, Pages: 353-359
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Abstract

The temperaturedependent current–voltage I–V characteristics of graphene/ntype Si Schottky diodes with and without sulfide treatment were measured in the temperature range of 150–420 K The temperature dependence of forwardbias I–V characteristics can be explained on the basis of the thermionic emission theory by assuming the presence of Gaussian distribution of the barrier heights The graphene/ntype Si device with sulfide treatment exhibits a good rectifying behavior with the ideality factor of 18 and low leakage at 300 K The enhanced device performance is considered to mainly come from the presence of Si–S bonds that serve to improve the Schottky barrier inhomogeneity Compared to the fitting data for the temperaturedependent reversebias I–V characteristics of graphene/ntype Si devices without sulfide treatment the fitting data for the temperaturedependent reversebias I–V characteristics of graphene/ntype Si devices with sulfide treatment show that a higher barrier height for hopping result in a lower leakage current This is because of more homogenous barrier height for graphene/ntype Si devices with sulfide treatment

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