Authors: U Breuer W Krumpen F Fitsilis
Publish Date: 2003/02/27
Volume: 375, Issue: 7, Pages: 906-911
Abstract
The development of analytical tools and procedures for process control is a prerequisite for the integration of high permittivity and/or ferroelectric materials in CMOS devices The thickness and composition of perovskite oxide films were determined by wavelength dispersive Xray fluorescence analysis XRF with special emphasis on the ratio of the groupII elements to the Ti content and a precision of 05 was achieved for a typical film thickness of 20–30 nm Secondary ion mass spectrometry SIMS and sputtered neutrals mass spectrometry SNMS was used for depth profiling to determine film homogeneity and elemental interdiffusion at heterointerfaces Examples are given for BaxSr1−xTiO3 and SrTiOx thin films which were grown in a prototype MOCVD production tool No interdiffusion was observed for films grown at 600 °C on Pt electrodes in contrast to films grown directly on Si
Keywords: