Authors: D Thien FJ Meyer zu Heringdorf P Kury M Hornvon Hoegen
Publish Date: 2004/03/03
Volume: 379, Issue: 4, Pages: 588-593
Abstract
Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si100 surface Using spot profile analyzing low energy electron diffraction the morphological changes from a single stepped vicinal Si100 surface to a singledomain 2×1 reconstructed surface have been investigated in situ during Si deposition The temperature range for formation of this kineticallystabilized singledomain surface was found to be 400–500 °C This singledomain surface could be preserved for further characterization and experiments after quenching to room temperature
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