Authors: X M Fan J S Lian Z X Guo L Zhao Q Jiang
Publish Date: 2006/04/01
Volume: 41, Issue: 8, Pages: 2237-2241
Abstract
The photoluminescence PL emission properties of ZnO films obtained on quartz glass substrate by the oxidation of Zn films with the oxygen pressure of 50Pa at temperature of 773 K~973 K were studied The strong single violet emission centering on 424 nm or 290 eV without any accompanying deeplevel emission and UV emission was observed in the PL spectra of the ZnO films at room temperature The intensity of violet emission increased with increasing annealing temperature in the range of 773 K~873 K and decreased with increasing annealing temperature in the range of 873 K~973 K These violet emission bands are attributed to the electron transition from interstitial zinc Zni level 291 eV to the valence band
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