Authors: G A Boni L Hrib S B Porter G Atcheson I Pintilie K Rode L Pintilie
Publish Date: 2016/09/15
Volume: 52, Issue: 2, Pages: 793-803
Abstract
Epitaxial thin films of NiFe2O4 are fabricated by pulsed laser deposition on SrTiO3 substrate Symmetrical capacitorlike structures are formed using SrRuO3 as bottom and top electrodes Electrical characterizations including current–voltage capacitance–voltage and capacitance–frequency measurement reveal a hysteresislike behaviour for current and capacitance as function of voltage This could be assigned to a resistive and/or capacitive switching A “degradation” process takes place after repeated voltage cycling or after heating the sample to 400 K leading to the stabilization of different resistive states These features can be related to the changes observed in the capacitance–frequency characteristics suggesting the presence of a relaxation mechanism at low frequencies and can be associated with the presence of a deep donortype level in the bandgap of the NiFe2O4 layerThe authors acknowledge the financial support from the following projects IdeaComplex Research Grant PNIIIDPCCE201120006 Contract No 3/2012 Romanian Ministry of EducationExecutive Unit for Funding High Education Research Development and Innovation MENUEFISCDI FP7 Project IFOX Core Program of NIMP PN16480102 The authors acknowledge also the assistance of Dr Iuliana Pasuk for XRD characterization
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