Authors: B Merabet Y AlDouri H Abid Ali H Reshak
Publish Date: 2012/08/24
Volume: 48, Issue: 2, Pages: 758-764
Abstract
We have explored the electronic and optical properties of cubic Al x Ga1−x 1−y Mn y As system using the FPLAPW method The unit cell has 64 atoms so that one manganese Mn atom is placed in the position of gallium site which corresponds to 3125 doping concentration with x = 125 Our calculations using local density approximation + U Hubbard parameter scheme predict that the ferromagnetic state for AlGaMnAs with a magnetic moment of about 4014 μB per Mn dopant is more favorable Despite its electronic properties being strongly affected by inducing small amounts of Mn substitutional atoms in the cationic sublattice of AlGaAs Al x Ga1−x 1−y Mn y As possesses optical properties strictly less than those of Al x Ga1−x As especially its optical conductivity at the peak 1256 eV The results indicate that AlGaMnAs may be a good candidate for optoelectronics when exploited in optical fiber networks and it can still be of great interest because of its promising potential when used for spintronicsOne of the authors YA would like to acknowledge the FRGS Grant 900300249 900300255 and TWASItaly of his visit to JUST Jordan under TWASUNESCO Associateship for full financial and technical supports respectively For Ali H Reshak his study was supported from the institutional research concept of the project CENAKVA No CZ105/2100/010024 the Grant No 152/2010/Z of the Grant Agency of the University of South Bohemia The School of Materials Engineering University Malaysia Perlis UniMAP Perlis Malaysia
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