Authors: J Ball B G Mendis H S Reehal
Publish Date: 2013/12/03
Volume: 49, Issue: 5, Pages: 2078-2084
Abstract
We describe the fabrication of silicon nanowire arrays on silicon substrates using Sn as a catalyst metal and electron cyclotron resonance chemical vapour deposition as the growth method This technique features low deposition pressures and long meanfree paths allowing the ability to control the ion bombardment energies at the substrate with the application of RF power to the substrate The applied RF signal generates a DC selfbias across the substrate Wires have been grown under differing levels of DC selfbias from 0 to −100 V The impact on wire density morphology and catalyst stability is described
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